2N1893 small signal npn transistor n general purpose high voltage device description the 2N1893 is a silicon planar epitaxial npn transistor in jedec to-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. it provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 v collector-to-base voltage rating. ? internal schematic diagram january 2003 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 120 v v cer collector-emitter voltage (r be 10 w ) 100 v v ceo collector-emitter voltage (i b = 0) 80 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 0.5 a p tot total dissipation at t amb 25 o c at t c 25 o c at t c 100 o c 0.8 3 1.7 w w w t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c to-39 1/5
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 50 187.5 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 90 v v cb = 90 v t c = 150 o c 10 15 na m a i ebo emitter cut-off current (i c = 0) v eb = 5 v 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 m a 120 v v (br)cer * collector-emitter breakdown voltage (r be 10 w ) i c = 10 ma 100 v v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = 10 ma 80 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 m a 7v v ce(sat) * collector-emitter saturation voltage i c = 50 ma i b = 5 ma i c = 150 ma i b = 15 ma 1.2 5 v v v be(sat) * base-emitter saturation voltage i c = 50 ma i b = 5 ma i c = 150 ma i b = 15 ma 0.82 0.96 0.9 1.3 v v h fe * dc current gain i c = 0.1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 10 ma v ce = 10 v t c = -55 o c 20 35 40 20 50 80 80 40 120 h fe * small signal current gain i c = 1 ma v ce = 5 v f = 1khz i c = 5 ma v ce = 10 v f = 1khz 30 45 70 85 150 f t transition frequency i c = 50 ma v ce = 10 v f = 20mhz 50 70 mhz c cbo collector-base capacitance i e = 0 v cb = 10 v f = 1mhz 13 15 pf c ebo emitter-base capacitance i c = 0 v eb = 0.5 v f = 1mhz 55 85 pf * pulsed: pulse duration = 300 m s, duty cycle 1 % 2N1893 2/5
dc current gain dc current gain 2N1893 3/5
dim. mm inch min. typ. max. min. typ. max. a 12.7 0.500 b0.490.019 d6.60.260 e8.50.334 f9.40.370 g 5.08 0.200 h1.20.047 i0.90.035 l45 o (typ.) l g i d a f e b h p008b to-39 mechanical data 2N1893 4/5
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